收藏本站
DMN6040SVT
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 5V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I S
I DM
I AR
E AR
5.0
4.0
6.3
5.0
4.3
3.4
5.4
4.3
2.1
30
14.2
10
A
A
A
A
A
A
A
mJ
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.2
0.75
106
69
1.8
1.1
68
44
20
-55 to +150
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
100
100
R θ JA(t) (t) * R θ JA
80
Single Pulse
R θ JA = 72 ° C/W
=r
10
R DS(on)
Limited
P W = 10 μs
T J A = P * R θ JA(t)
-T
60
DC
40
1
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
20
0.1
P W = 1ms
P W = 100μs
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
2 of 7
www.diodes.com
March 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN6066SSD-13 MOSFET 2N-CH 60V 3.3A SO8
DMN6066SSS-13 MOSFET N-CH 60V 3.7A SO8
DMN6068LK3-13 MOSFET N-CH 60V 6A DPAK
DMN6068SE-13 MOSFET N-CH 60V 4.1A SOT223
DMN62D0LFB-7B MOSFET N-CH 60V 100MA 3-DFN
DMN62D0SFD-7 MOSFET N-CH 60V 540MA 3-DFN
DMN65D8LDW-7 MOSF N CH DUAL 60V 180MA SOT363
DMN65D8LFB-7B MOSF N CH 60V 260MA X1-DFN1006-3
相关代理商/技术参数
DMN6066SSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6066SSD-13 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6066SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6066SSS-13 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6068LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 60V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6068SE 制造商:Diodes Incorporated 功能描述:MOSFET N CH DIOD 60V 4.1A SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous